Part IPB12CNE8NG
Description Power-Transistor
Category Transistor
Manufacturer Infineon
Size 595.67 KB
Infineon
IPB12CNE8NG

Overview

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 12.4 67 V mΩ A
  • Ideal for high-frequency switching and synchronous rectification Type IPB12CN10N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Package Marking