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IPD35N10S3L-26 - Power-Transistor

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Infineon Technologies

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IPD35N10S3L-26 Power-Transistor by Infineon Technologies - Datasheet Preview — Datasheet preview – IPD35N10S3L-26

Datasheet Details

Part number	IPD35N10S3L-26
Manufacturer	Infineon Technologies
File Size	319.66 KB
Description	Power-Transistor
Datasheet	IPD35N10S3L-26 Datasheet
Additional preview pages of the IPD35N10S3L-26 datasheet.

Product details

Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V.

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Published: May 20, 2015 |