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IPD60R600CP - Power Transistor

Key Features

  • Lowest figure-of-merit R ON x Qg.
  • Ultra low gate charge.
  • Extreme dv/dt rated.
  • High peak current capability.
  • Qualified according to JEDEC1) for target.

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IPD60R600CP CoolMOS® Power Transistor Features • Lowest figure-of-merit R ON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.