IPD640N06LG Datasheet | Infineon

IPD640N06L G Opti MOS® Power-Transistor Features - For fast switching converters and sync. rectification - N-channel enhancement - logic level - 175 °C operating temperature - Avalanche rated - Pb-free lead plating, Ro HS pliant Product Summary V DS R DS(on),max ID 60 64 18 V mΩ A Type IPD640N06L G Type Package IPD640N06L G Marking PG-TO252-3 640N06L PG-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 18 12 72 43 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C1) I D=18 A, R GS=25 Ω I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 47 -55 ... 175 55/175/56 See figure 3 ..net Rev. 1.4 page 1 2008-09-01 IPD640N06L G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R th JC R th JA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=16 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=18 A V GS=4.5 V, I D=12 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=18 A 60 1.2 1.6 0.01 2 1 µA V 3.2 75 50 K/W Values typ. max. Unit 1 10 47 64 1.2...