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IPD640N06LG Datasheet Power Transistor

Manufacturer: Infineon

Overview: IPD640N06L G OptiMOS® Power-Transistor.

Key Features

  • For fast switching converters and sync. rectification.
  • N-channel enhancement - logic level.
  • 175 °C operating temperature.
  • Avalanche rated.
  • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 60 64 18 V mΩ A Type IPD640N06L G Type Package IPD640N06L G Marking PG-TO252-3 640N06L PG-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pu.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
VBsemi Logo IPD640N06LG N-Channel MOSFET VBsemi
Infineon Logo IPD640N06L Power-Transistor Infineon
INCHANGE Logo IPD640N06L N-Channel MOSFET INCHANGE

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