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IPD640N06L Datasheet Power-transistor

Manufacturer: Infineon

Overview: OptiMOS® Power-Transistor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • For fast switching converters and sync. rectification.
  • N-channel enhancement - logic level.
  • 175 °C operating temperature.
  • Avalanche rated.
  • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID IPD640N06L G 60 V 64 mΩ 18 A Type IPD640N06L G TPyapcekage IMPaDr6k4in0gN06L G PG-TO252-3 640NP0G6L-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25.

Similar Datasheet

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INCHANGE Logo IPD640N06L N-Channel MOSFET INCHANGE
VBsemi Logo IPD640N06LG N-Channel MOSFET VBsemi
Infineon Technologies Logo IPD640N06LG Power Transistor Infineon Technologies

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