IPD640N06L
IPD640N06L is Power-Transistor manufactured by Infineon.
- Part of the IPD640N06LG comparator family.
- Part of the IPD640N06LG comparator family.
Opti MOS® Power-Transistor
Features
- For fast switching converters and sync. rectification
- N-channel enhancement
- logic level
- 175 °C operating temperature
- Avalanche rated
- Pb-free lead plating, Ro HS pliant
Product Summary V DS R DS(on),max ID
IPD640N06L G
60 V 64 mΩ 18 A
Type
IPD640N06L G
TPyapcekage IMPa Dr6k4in0g N06L G
PG-TO252-3 640NP0G6L-TO252-3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C
Pulsed drain current
I D,pulse
T C=100 °C T C=25 °C1)
Avalanche energy, single pulse
E AS
I D=18 A, R GS=25 Ω
Reverse diode dv /dt dv /dt
I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
Gate source voltage
V...
