The IPD640N06L is a Power-Transistor.
| Package | TO-252-3 |
|---|---|
| Pins | 3 |
| Height | 2.41 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPD640N06L Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating.
* For fast switching converters and sync. rectification * N-channel enhancement - logic level * 175 °C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID IPD640N06L G 60 V 64 mΩ 18 A Type IPD640N06L G TPyapcekage IMPaDr6k4in0gN06L. |
| Part Number | IPD640N06L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤64mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on)≤64mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VG. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 5000 | 25+ : 2.0374 USD 60+ : 1.6717 USD 93+ : 1.6194 USD 128+ : 1.5672 USD |
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| Win Source | 4610 | 25+ : 2.0374 USD 60+ : 1.6717 USD 93+ : 1.6194 USD 128+ : 1.5672 USD |
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| Worldway Electronics | 15868 | 7+ : 0.0942 USD 10+ : 0.0924 USD 100+ : 0.0895 USD 500+ : 0.0867 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD640N06LG | Infineon | Power Transistor |
| IPD640N06LG | VBsemi | N-Channel MOSFET |