IPD640N06LG Description
IPD640N06LG .VBsemi. IPD640N06LG N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 45.
IPD640N06LG Key Features
- TrenchFET® Power MOSFET
- 175 °C Junction Temperature