IPP45N04S4L-08 Datasheet | Infineon

.Data Sheet.co.kr IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 Opti MOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 40 7.6 45 PG-TO262-3-1 V mΩ A Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested PG-TO263-3-2 PG-TO220-3-1 Type IPB45N04S4L-08 IPI45N04S4L-08 IPP45N04S4L-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N04L08 4N04L08 4N04L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=22A T C=25°C Value 45 42 180 55 45 +20/-16 45 -55 ... +175 55/175/56 m J A V W °C Unit A Rev. 1.0 page 1 2010-04-13 Datasheet pdf - http://..net/ .Data Sheet.co.kr IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1m A V GS(th) I DSS V DS=V GS, I D=17µA V DS=40V, V GS=0V V DS=18V, V GS=0V, T j=85°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=4.5V, I D=22A V GS=4.5V, I D=22A, SMD version V GS=10 V, I D=45 A V GS=10 V, I D=45 A, SMD version 40 1.2 1.7 0.01 1 9.5 9.2 6.9 6.6 2.2 1 20 100 10.9 10.6 7.9 7.6 n A mΩ µA V 3.3 62 62 40 K/W Values typ. max. Unit Rev. 1.0 page...