IPP45N06S4-09 Datasheet | Infineon

.Data Sheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 Opti MOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9.2 45 V mΩ A Features - N-channel - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (Ro HS pliant) - 100% Avalanche tested Type IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0609 4N0609 4N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=22.5A T C=25°C Value 45 45 180 97 45 ±20 71 -55 ... +175 55/175/56 m J A V W °C Unit A Rev. 1.0 page 1 2009-03-24 Datasheet pdf - http://..net/ .Data Sheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1m A V GS(th) I DSS V DS=V GS, I D=34µA V DS=60V, V GS=0V, T j=25°C V DS=60V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10 V, I D=45 A V GS=10V, I D=45A, SMD version 60 2.0 3.0 0.01 4.0 1 µA V 2.1 62 62 40 K/W Values typ. max. Unit - 5 7.9 7.6 100 100 9.4 9.1 n A mΩ Rev. 1.0 page 2 2009-03-24 Datasheet pdf -...