IPP45N06S3L-13 Datasheet | Infineon

.Data Sheet.co.kr IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Opti MOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 55 13.1 45 V mΩ A Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (Ro HS pliant) - 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L13 3N06L13 3N06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=22.5 A Value 45 37 180 145 45 ±16 65 -55 ... +175 55/175/56 m J A V W °C Unit A Rev. 1.1 page 1 2007-11-07 Datasheet pdf - http://..net/ .Data Sheet.co.kr IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) I DSS V DS=V GS, I D=30 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=5 V, I D=17 A V GS=5 V, I D=17 A, SMD version V GS=10 V, I D=26 A V GS=10 V, I D=26 A, SMD version 55 1.2 1.7 0.01 2.2 1 µA V 2.3 62 62 40 K/W Values typ. max. Unit - 1 1 20.4 20.1...