IPUH6N03LAG Datasheet | Infineon

.Data Sheet.co.kr IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G Opti MOS®2 Power-Transistor Features - Ideal for high-frequency dc/dc converters - Qualified according to JEDEC1) for target application - N-channel, logic level - Excellent gate charge x R DS(on) product (FOM) - Superior thermal resistance - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant Product Summary V DS R DS(on),max (SMD version) ID 25 6 50 V mΩ A Type IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Package Marking PG-TO252-3-11 H6N03LA PG-TO252-3-23 H6N03LA PG-TO251-3-11 H6N03LA PG-TO251-3-1 H6N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 350 150 6 ±20 71 -55 ... 175 55/175/56 m J k V/µs V W °C Unit A Rev. 1.3 page 1 2006-05-11 Datasheet pdf - http://..net/ .Data Sheet.co.kr IPDH6N03LA G IPSH6N03LA...