IPUH6N03LB Datasheet | Infineon

Type IPSH6N03LB Opti MOS®2 Power-Transistor Package Marking - Qualified according to JEDEC1) for target applications - N-channel - Logic level - Excellent gate charge x R DS(on) product (FOM) - Superior thermal resistance - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A Type IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current T C=25 °C2) T C=100 °C 50 50 200 160 6 ±20 Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C m J k V/µs V W °C T C=25 °C 83 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 0.3 page...