PTFA181001E Datasheet (Infineon)

Part PTFA181001E
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 418.90 KB
Pricing from 18.3765 USD, available from Win Source and SHENGYU ELECTRONICS.
Infineon

PTFA181001E Overview

Key Specifications

Max Operating Temp: 200 °C

Description

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance at 1879.8 MHz, 28 V
  • Average output power = 45 W
  • Linear Gain = 16.5 dB
  • Efficiency = 36%
  • EVM RMS = 1.8% Typical CW performance, 1880 MHz, 28 V

Price & Availability

Seller Inventory Price Breaks Buy
Win Source 5 - View Offer
SHENGYU ELECTRONICS 12368 1+ : 18.3765 USD
10+ : 18.009 USD
100+ : 17.46 USD
1000+ : 16.91 USD
View Offer