Datasheet Details
| Part number | PTFA181001E |
|---|---|
| Manufacturer | Infineon |
| File Size | 418.90 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA181001E Datasheet
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General Description
The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.
Key Features
- include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features.
- Thermally-enhanced packages Broadband i.