PTFA181001HL Datasheet (Infineon)

Part PTFA181001HL
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 335.49 KB
Available from Suntronic.
Infineon

PTFA181001HL Overview

Key Specifications

Max Operating Temp: 150 °C

Description

The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges.

Key Features

  • Average output power = 45 W
  • Linear Gain = 16.5 dB
  • Efficiency = 36%
  • EVM RMS = 1.8% Typical CW performance, 1880 MHz, 28 V
  • Output power at P–1dB = 120 W

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