• Part: PTFA181001HL
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Infineon
  • Size: 335.49 KB
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Datasheet Summary

Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 - 1880 MHz ..net Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL- Package PG-63248-2 PTFA181001HL- Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880...