Datasheet Summary
Preliminary PTFA181001GL PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805
- 1880 MHz
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Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL- Package PG-63248-2 PTFA181001HL- Package PG-64248-2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 1880...