PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon Technologies

Part number	PTFA181001F
Manufacturer	Infineon Technologies
File Size	418.90 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA181001F Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFA181001F, PTFA181001E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA181001F datasheet.

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band.

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 Features.
Thermally-enhanced packages Broadband i.

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Published: Jul 11, 2011 |