PTFA181001F Datasheet (Infineon)

Part PTFA181001F
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 418.90 KB
Infineon

PTFA181001F Overview

Key Specifications

Pins: 3
Max Operating Temp: 150 °C

Description

The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.

Key Features

  • Thermally-enhanced packages Broadband internal matching Typical EDGE performance at 1879.8 MHz, 28 V
  • Average output power = 45 W
  • Linear Gain = 16.5 dB
  • Efficiency = 36%
  • EVM RMS = 1.8% Typical CW performance, 1880 MHz, 28 V

Price & Availability

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