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SIGC156T120R2CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • power module BSM100GD120DLC Applications: • drives
C
G
E
Chip Type
VCE
ICn
Die Size 12.59 X 12.59 mm2
Package sawn on foil
Ordering Code Q67041A4663-A003
SIGC156T120R2CL 1200V 100A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.59 X 12.59 8 x ( 3.98 x 2.38 ) 1.46 x 0.8 158.5 / 132.
SIGC156T120R2CL Datasheet
