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SIGC156T120R2CQ - IGBT

Description

Published by Infineon Technologies AG, D-81726 München All Rights Reserved.

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Features

  • 1200V Fieldstop technology 120µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • integrated gate resistor This chip is used for:.
  • IGBT Modules C.

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Datasheet preview – SIGC156T120R2CQ

Datasheet Details

Part number SIGC156T120R2CQ
Manufacturer Infineon
File Size 104.45 KB
Description IGBT
Datasheet download datasheet SIGC156T120R2CQ Datasheet
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www.DataSheet4U.com SIGC156T120R2CQ IGBT Chip in Fieldstop-technology FEATURES: • 1200V Fieldstop technology 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • integrated gate resistor This chip is used for: • IGBT Modules C Applications: • SMPS, resonant applications G E Chip Type SIGC156T120R2CQ VCE ICn Die Size 12.59 X 12.59 mm2 Package sawn on foil Ordering Code SP0000-83655 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.59 X 12.59 8 x (3.98 x 2.38) 1.46 x 0.8 158.5 / 132.
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