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SIGC156T60NR2C - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 600V NPT technology.
  • 100µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • IGBT-Modules.

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Datasheet Details

Part number SIGC156T60NR2C
Manufacturer Infineon
File Size 95.90 KB
Description IGBT
Datasheet download datasheet SIGC156T60NR2C Datasheet
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www.DataSheet4U.com SIGC156T60NR2C IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Modules Applications: • drives G E Chip Type VCE ICn 200A Die Size 12.5 x 12.5 mm2 Package sawn on foil Ordering Code Q67050-A4013A001 SIGC156T60NR2C 600V MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.5 x 12.5 156.25 / 138.2 8x( 2.58x4.78 ) 0.8 x 1.
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