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SIGC16T120C - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1200V NPT technology.
  • 200µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • BUP 311D /BUP 212.

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Datasheet Details

Part number SIGC16T120C
Manufacturer Infineon
File Size 92.07 KB
Description IGBT
Datasheet download datasheet SIGC16T120C Datasheet
Additional preview pages of the SIGC16T120C datasheet.

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www.DataSheet4U.com SIGC16T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • BUP 311D /BUP 212 Applications: • drives G E Chip Type SIGC16T120C VCE 1200V ICn 8A Die Size 4.04 x 4 mm2 Package sawn on foil Ordering Code Q67041-A4673A003 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.04 x 4 16.16 / 10.4 1.88x2.18 0.71x1.
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