Click to expand full text
www.DataSheet4U.com
SIGC185T170R2C
IGBT Chip in NPT-technology
FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling
C
This chip is used for: • IGBT-Module BSM100GB170DL Applications: • drives
G
E
Chip Type
SIGC185T170R2C
VCE
ICn
Die Size 13.56 x 13.56 mm2
Package sawn on foil
Ordering Code Q67041-A4697A001
1700V 100A
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 13.56 x 13.56 183.87 / 141.6 8 x ( 2.38x3.98 ) 0.757 x 1.
SIGC185T170R2C Datasheet
