SPB11N60C2 Overview
.. Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 11 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt