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SPB11N60C2 - Power Transistor

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Part number SPB11N60C2
Manufacturer Infineon Technologies
File Size 187.69 KB
Description Power Transistor
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www.DataSheet4U.com Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.38 11 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP11N60C2 SPB11N60C2 SPA11N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4295 Q67040-S4298 Marking 11N60C2 11N60C2 11N60C2 P-TO220-3-31 Q67040-S4332 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 11 7 111) 71) 22 340 0.6 11 6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.
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