SPB80N04S2-H4 Datasheet | Infineon

eature - N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 40 4 80 P- TO220 -3-1 V mΩ A - Enhancement mode - 175°C operating temperature - Avalanche rated - dv/dt rated Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67060-S6014 Q67060-S6013 Q67060-S6014 Marking 2N04H4 2N04H4 2N04H4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 660 25 6 ±20 300 -55... +175 55/175/56 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω m J Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=32V, di/dt=200A/µs, T jmax=175°C k V/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page...