Infineon Technologies 1ED2127S65F
The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT. The floating channel can be used to drive an Si / SiC power MOSFET or IGBT in the high-side or low-side configuration which operates up to 650 V, with output current of +/-4 A and propagation delay of less than 100 ns. The over-current protection and under-voltage lockout circuity detects over-current / under-voltage in the driven power transistor and terminates the gate drive voltage.| Part No. | 1ED2127S65F |
|---|---|
| Datasheet | 1ED2127S65F Download |
| Manufacturer |  Infineon Technologies |
| Description | 650V high-side gate driver |
| Buy | Stock & Price |
FEATURES
● Infineon thin-film-SOI-technology● Maximum blocking voltage +650 V
● Output source/sink current +4 A/ -4 A
● Maximum supply voltage of 25 V
● Integrated ultra-fast, low RDS(ON) Bootstrap Diode
● Negative VS transient immunity of 100 V
● Detection of over current and under voltage supply
● Multi-function RCIN/Fault/Enable (RFE) with programmable fault clear time
● Less than 100 ns propagation delay
● DSO-8 package
● RoHS compliant Product summary VS_OFFSET IO+/- (typ.) tON / tOFF (typ.) tR / tF (typ.) = 650 V max. = +4 A / -4 A = 55 ns / 55 ns = 12 ns / 12 ns Package PG-DSO-8 Potential applications
● Motor drives, general purpose inverters
● Forklift
● Light electric vehicles Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Ordering information Table 1 Order information Base part number Package type 1ED2127S65F 1ED21271S65F 1ED2147S65F 1ED21471S65F PG-DSO-8 PG-DSO-8 PG-DSO-8 PG-DSO-8 Standard pack Form Tape and Reel T...
