1ED2127S65F Overview
The 1ED21x7x family are high voltage, high current and high speed gate drivers for Si / SiC power MOSFET and IGBT. The floating channel can be used to drive an Si / SiC power MOSFET or IGBT in the high-side or low-side configuration which operates up to 650 V, with output current of +/-4 A and propagation delay of less than 100 ns. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise...
1ED2127S65F Key Features
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +650 V
- Output source/sink current +4 A/ -4 A
- Maximum supply voltage of 25 V
- Integrated ultra-fast, low RDS(ON) Bootstrap Diode
- Negative VS transient immunity of 100 V
- Detection of over current and under voltage supply
- Less than 100 ns propagation delay
- DSO-8 package
- RoHS pliant