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6EDL04I065NT - 650V three-phase gate driver

Datasheet Summary

Description

The device 6ED family

2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +650 V.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

Features

  • Infineon thin-film-SOI-technology.
  • Maximum blocking voltage +650 V.
  • Output source/sink current +0.165 A/-0.375 A.
  • Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
  • Separate control circuits for all six drivers.
  • Detection of over current and under voltage supply.
  • Externally programmable delay for fault clear after over cur.

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Datasheet Details

Part number 6EDL04I065NT
Manufacturer Infineon
File Size 592.85 KB
Description 650V three-phase gate driver
Datasheet download datasheet 6EDL04I065NT Datasheet
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Full PDF Text Transcription

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6EDL04 family 6EDL04x065xT family 650 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +0.165 A/-0.
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