6EDL04I065PR Datasheet PDF - Infineon three-phase gate driver Specs

6EDL04I065PR - three-phase gate driver

This page provides the datasheet information for the 6EDL04I065PR, a member of the 6EDL04I065NR three-phase gate driver family.

Datasheet Summary

Description

The device 6ED family

3rd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +650 V.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

Features

Infineon thin-film-SOI-technology.
Maximum blocking voltage +650 V.
Output source/sink current +0.165 A/-0.375 A.
Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
Separate control circuits for all six drivers.
Detection of over current and under voltage supply.
Externally programmable delay for fault clear after over cur.

Datasheet Details

Part number	6EDL04I065PR
Manufacturer	Infineon
File Size	953.79 KB
Description	three-phase gate driver
Datasheet	6EDL04I065PR Datasheet
Additional preview pages of the 6EDL04I065PR datasheet.

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Full PDF Text Transcription

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6EDL04 family 6EDL04x065xR and 6EDL04N03PR family 650 V and 300 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +0.165 A/-0.

Published: May 17, 2025 |