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6EDL04I065PR - three-phase gate driver

Download the 6EDL04I065PR datasheet PDF. This datasheet also covers the 6EDL04I065NR variant, as both devices belong to the same three-phase gate driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The device 6ED family

3rd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +650 V.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

Key Features

  • Infineon thin-film-SOI-technology.
  • Maximum blocking voltage +650 V.
  • Output source/sink current +0.165 A/-0.375 A.
  • Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
  • Separate control circuits for all six drivers.
  • Detection of over current and under voltage supply.
  • Externally programmable delay for fault clear after over cur.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (6EDL04I065NR-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
6EDL04I065PT 650V three-phase gate driver
6EDL04I065NR three-phase gate driver
6EDL04I065NT 650V three-phase gate driver
6EDL04I06NC High voltage gate driver
6EDL04I06NT 200V and 600V three-phase gate driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
6EDL04 family 6EDL04x065xR and 6EDL04N03PR family 650 V and 300 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +0.165 A/-0.