Download 6EDL04N02PR Datasheet PDF
6EDL04N02PR datasheet preview
6EDL04N02PR page 2
Page 2
6EDL04N02PR page 3
Page 3

6EDL04N02PR Key Features

  • Infineon thin-film-SOI-technology
  • Maximum blocking voltage +600 V
  • Output source/sink current +0.165 A/-0.375 A
  • Integrated ultra-fast, low RDS(ON) Bootstrap Diode
  • Insensitivity of the bridge output to negative
  • Separate control circuits for all six drivers
  • Detection of over current and under voltage supply
  • Externally programmable delay for fault clear after over current detection
  • 'Shut down' of all switches during error conditions CMOS and LSTTL patible input (negative logic)
  • Signal interlocking of every phase to prevent crossconduction

Related Infineon Datasheets

Part Number Description
6EDL04N03PR three-phase gate driver
6EDL04N065PR three-phase gate driver
6EDL04N065PT 650V three-phase gate driver
6EDL04N06PC High voltage gate driver
6EDL04N06PT 200V and 600V three-phase gate driver

6EDL04N02PR Description

The device 6ED family 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device.

6EDL04N02PR Applications

  • 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Base