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6EDL04N065PT - 650V three-phase gate driver

Download the 6EDL04N065PT datasheet PDF. This datasheet also covers the 6EDL04I065NT variant, as both devices belong to the same 650v three-phase gate driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The device 6ED family

2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +650 V.

Based on the used SOI-technology there is an excellent ruggedness on transient voltages.

Key Features

  • Infineon thin-film-SOI-technology.
  • Maximum blocking voltage +650 V.
  • Output source/sink current +0.165 A/-0.375 A.
  • Integrated ultra-fast, low RDS(ON) Bootstrap Diode.
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology.
  • Separate control circuits for all six drivers.
  • Detection of over current and under voltage supply.
  • Externally programmable delay for fault clear after over cur.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (6EDL04I065NT-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for 6EDL04N065PT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 6EDL04N065PT. For precise diagrams, and layout, please refer to the original PDF.

6EDL04 family 6EDL04x065xT family 650 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD) Features • Inf...

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Enable (EN), Fault and Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology • Maximum blocking voltage +650 V • Output source/sink current +0.165 A/-0.