6EDL04N06PT Overview
The device 6ED family 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device.
6EDL04N06PT Key Features
- Infineon thin-film-SOI-technology
- Maximum blocking voltage +600 V
- Output source/sink current +0.165 A/-0.375 A
- Integrated ultra-fast, low RDS(ON) Bootstrap Diode
- Insensitivity of the bridge output to negative
- Separate control circuits for all six drivers
- Detection of over current and under voltage supply
- Externally programmable delay for fault clear after over current detection
- 'Shut down' of all switches during error conditions CMOS and LSTTL patible input (negative logic)
- Signal interlocking of every phase to prevent crossconduction
6EDL04N06PT Applications
- 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Base