AIMCQ120R080M1T
Features
- VDSS = 1200 V at Tvj = -55...175°C
- IDDC = 34 A at TC = 25°C
- RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C
- New performance-optimized chip technology (Gen1p) with improved RDSon- A
- Best in class switching energy for lower switching losses and reduced cooling efforts
- Lowest device capacitances for higher switching speeds and higher power density
- A bination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
- Reduced total gate charge QG for lower driving power and losses
- Increased remended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
- .XT die attach technology for best in class thermal performance
- Low package stray inductance for faster and cleaner switching
- Drive (Kelvin) Source pin for better gate control and reduced switching losses
- Creepage distance > 4.75 mm fitting Vrms(max) > 950 V based on IEC60664 for material group I, pollution degree 2
- SMT package for automated assembly and reduced system...
