Datasheet Details
| Part number | AIMCQ120R080M1T |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.54 MB |
| Description | 1200V Automotive MOSFET |
| Datasheet |
 AIMCQ120R080M1T Datasheet
|
|
|
General Description
Pin definition:
Pin 1 - Gate
Pin 2 - Drive Source
Pin 311 - Power Source
Pin 1222, TAB - Drain Note: the drive source and power source pins are not exchangeable, their exchange might lead to malfunction
Type AIMCQ120R080M1T
Package PG-HDSOP-22-3
Marking 12A
Key Features
- VDSS = 1200 V at Tvj = -55175°C.
- IDDC = 34 A at TC = 25°C.
- RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C.
- New performance-optimized chip technology (Gen1p) with improved RDSon.
- A.
- Best in class switching energy for lower switching losses and reduced cooling efforts.
- Lowest device capacitances for higher switching speeds and higher power density.
- A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and ena.