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AIMCQ120R080M1T - 1200V Automotive MOSFET

Description

Pin definition: Pin 1 - Gate Pin 2 - Drive Source Pin 311 - Power Source Pin 1222, TAB - Drain Note: the drive source and power source pins are not exchangeable, their exchange might lead to malfunction Type AIMCQ120R080M1T Package PG-HDSOP-22-3 Marking 12A

Features

  • VDSS = 1200 V at Tvj = -55175°C.
  • IDDC = 34 A at TC = 25°C.
  • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C.
  • New performance-optimized chip technology (Gen1p) with improved RDSon.
  • A.
  • Best in class switching energy for lower switching losses and reduced cooling efforts.
  • Lowest device capacitances for higher switching speeds and higher power density.
  • A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and ena.

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Datasheet Details

Part number AIMCQ120R080M1T
Manufacturer Infineon
File Size 1.54 MB
Description 1200V Automotive MOSFET
Datasheet download datasheet AIMCQ120R080M1T Datasheet
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Full PDF Text Transcription

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AIMCQ120R080M1T CoolSiC™ Automotive MOSFET 1200 V Final datasheet CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 34 A at TC = 25°C • RDS(on) = 80 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest device capacitances for higher switching speeds and higher power density • A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving • Reduced total gate charge QG for lower driving power and losses • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • .
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