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AUIRFR5410 Datasheet

Manufacturer: Infineon
AUIRFR5410 datasheet preview

AUIRFR5410 Details

Part number AUIRFR5410
Datasheet AUIRFR5410-Infineon.pdf
File Size 302.18 KB
Manufacturer Infineon
Description Power MOSFET
AUIRFR5410 page 2 AUIRFR5410 page 3

AUIRFR5410 Overview

Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide...

AUIRFR5410 Key Features

  • Advanced Planar Technology
  • P-Channel MOSFET
  • Low On-Resistance
  • Dynamic dV/dT Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS pliant
  • Automotive Qualified

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