The AUIRFR5410 is a Power MOSFET.
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.52 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | AUIRFR5410 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This be.
* Advanced Planar Technology * P-Channel MOSFET * Low On-Resistance * Dynamic dV/dT Rating * 175°C Operating Temperature * Fast Switching * Fully Avalanche Rated * Repetitive Avalanche Allowed up to Tjmax * Lead-Free, RoHS Compliant * Automotive Qualified * Description Specifically designed for . |
| Part Number | AUIRFR5410 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This be.
* * * * * * * * AUIRFR5410 HEXFET® Power MOSFET D * * Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 589 | 25+ : 1.4 USD 100+ : 1.33 USD 500+ : 1.26 USD 1000+ : 1.19 USD |
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| DigiKey | 69 | 1+ : 3.95 USD 10+ : 2.596 USD 100+ : 1.8232 USD |
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| Farnell | 0 | 5+ : 2.84 GBP 50+ : 1.93 GBP 100+ : 1.45 GBP 500+ : 1.27 GBP |
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