AUIRFS4310Z
AUIRFS4310Z is Power MOSFET manufactured by Infineon.
AUTOMOTIVE GRADE
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
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Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
HEXFET® Power MOSFET
VDSS RDS(on) typ. max.
ID (Silicon Limited) ID (Package Limited)
100V 4.8m 6.0m 127A 120A
G Gate
S G D2Pak AUIRFS4310Z
D Drain
S Source
Base part number AUIRFS4310Z
Package...