Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
- l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
- HEXFET® Power MOSFET
D
V(BR)DSS
100V 5.6mΩ
130A c 75A
RDS(on) typ. G S
max. ID (Silicon Limited) ID (Package Limited)
7.0mΩ.
AUIRFS4310 Datasheet
