AUIRFS4310Z Datasheet | International Rectifier

AUTOMOTIVE GRADE Features - Advanced Process Technology - Ultra Low On-Resistance - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, Ro HS pliant - Automotive Qualified - Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G Gate - 97715A HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) 100V 4.8m: 6.0m: c127A ID (Package Limited) 120A DS G D2Pak AUIRFS4310Z D Drain S...