Download the AUIRFSL4115 datasheet PDF.
This datasheet also covers the AUIRFS4115 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
Advanced Process Technology.
Ultra Low On-Resistance.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
AUIRFS4115 AUIRFSL4115
HEXFET® Power MOSFET
VDSS
150V
RDS(on) typ. max. 10.3m 12.1m
ID 99A
DD.
Full PDF Text Transcription for AUIRFSL4115 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRFSL4115. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjm...
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Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRFS4115 AUIRFSL4115 HEXFET® Power MOSFET VDSS 150V RDS(on) typ. max. 10.3m 12.1m ID 99A DD Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRFSL4115 Datasheet
