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AUIRFSL4127 - Power MOSFET

Download the AUIRFSL4127 datasheet PDF. This datasheet also covers the AUIRFS4127 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  •  Advanced Process Technology.
  •  Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFS4127-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AUIRFSL4127 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFSL4127. For precise diagrams, and layout, please refer to the original PDF.

Features  Advanced Process Technology  Ultra Low On-Resistance 175°C Operating Temperature Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, ...

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ast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G S D AUIRFS4127 AUIRFSL