• Part: AUIRGPS4070D0
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 866.87 KB
Download AUIRGPS4070D0 Datasheet PDF
Infineon
AUIRGPS4070D0
AUIRGPS4070D0 is INSULATED GATE BIPOLAR TRANSISTOR manufactured by Infineon.
Features - Low VCE (on) Trench IGBT Technology - Low Switching Losses - 6µs SCSOA - Square RBSOA - 100% of the parts tested for ILM  - Positive VCE (on) Temperature Coefficient - Soft Recovery Co-pak Diode - Lead-Free, Ro HS pliant - Automotive Qualified -  C G E n-channel VCES = 600V IC = 160A, TC = 100°C tsc 6µs, TJ(MAX) = 175°C VCE(on) typ. = 1.70V  C Benefits - High Efficiency in a Wide Range of Applications - Suitable for Applications in the Low to Mid-Range Frequencies - Rugged Transient Performance for Increased Reliability - Excellent Current Sharing in Parallel Operation - Low EMI G Gate PG-TO274-3-903 C Collector E Emitter Base Part Number   Package Type   Standard Pack Form Quantity Orderable Part Number PG-TO274-3-903 Tube 25 AUIRGPS4070D0 Absolute Maximum Ratings Stresses beyond...