Datasheet4U Logo Datasheet4U.com

AUIRLL024N Datasheet Power MOSFET

Manufacturer: Infineon

Overview:   AUTOMOTIVE GRADE AUIRLL024N.

General Description

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

S D G SOT-223 AUIRLL024N G Gate D Drain S Source Base part number AUIRLL024N Package Type SOT-223 Standard Pack Form Quantity

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dynamic dv/dt Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • HEXFET® Power MOSFET   VDSS 55V RDS(on) max. 0.065 ID 3.1A D.