AUIRLL024Z Datasheet | International Rectifier

- 97762 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features - - - - - - - Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified - D V(BR)DSS RDS(on) typ. max. ID 55V 48m 60m 5.0A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These Features bine to make this...