Infineon Technologies BAV199
Silicon Low Leakage Diode
| Part No. | BAV199 |
|---|---|
| Datasheet | BAV199 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Low Leakage Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs t=1s VR VRM IF IFSM Total power dissipation BAV199, TS ≤ 31°C Junction temperature Storage temperature Ptot Tj Tstg Thermal Resistance Parameter Junction - soldering point2) BAV199 Symbol RthJS 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance Marking JYs Value 80 85 200 4.5 0.5 330 Unit V mA A mW 150 -65 ... 150 °C Value ≤ 360 Unit K/W 1 2007-04-19 BAV199...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified
