Infineon Technologies BAW101
Silicon Switching Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Peak reverse voltage VRM Forward current IF Peak forward current IFM Peak forward current Surge forward current, t = 1 µs IFM IFS Non-repetitive peak surge forward current IFSM Total power dissipation Ptot TS ≤ 35°C Junction temperature Tj Storage temperature Tstg 1Pb-containing package may be available upon special request Marking JPs Value 300 300 250 500 500 4.5 350 Unit V mA mA A mW 150 -65 ... 150 °C 1 2007-04-20 BAW101... Thermal Resistance Parameter Junction - soldering point1) BAW101 Symbol RthJS Value ≤ 330 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter S