Siemens BAW101
Silicon Switching Diode
| Part No. | BAW101 |
|---|---|
| Datasheet | BAW101 Download |
| Manufacturer |  Siemens |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS ≤ 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFM IFS Ptot Tj Tstg Values 300 300 250 500 4.5 350 150 – 65 … + 150 Unit V mA A mW ˚C 470 330 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 101ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current VR = 250 V VR = 250 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – 6 1 – – pF µs Values typ. max.
