The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NPN Silicon Darlington Transistors
• For general AF applications • High collector current • High current gain • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BCP49
4
3
2
1
C(2,4) B(1)
E(3)
EHA00009
Type BCP49
Marking
Pin Configuration
Package
BCP 49 1 = B 2 = C 3 = E 4 = C SOT223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature
Thermal Resistance Junction - soldering point2)
Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
RthJS
Values
Unit
60
V
80
10
500
mA
800
mA
100
200
1.5
W
150
°C
-65 ...