Infineon Technologies BCV62C
PNP Silicon Double Transistor
| Part No. | BCV62C |
|---|---|
| Datasheet | BCV62C Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Double Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage DC collector current Peak collector current Base peak current (transistor T1) Total power dissipation, TS = 99 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBS IC ICM IBM Ptot Tj Tstg Value Unit 30 V 30 6 100 mA 200 200 300 mW 150 °C -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤170 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) K/W 1 2011-07-25 BCV62ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1)...
