Infineon Technologies BFR360F
Low Noise Silicon Bipolar RF Transistor
| Part No. | BFR360F |
|---|---|
| Datasheet | BFR360F Download |
| Manufacturer |  Infineon Technologies |
| Description | Low Noise Silicon Bipolar RF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 98°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 6 15 15 2 35 4 210 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 250 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2013-11-06 BFR360FELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 4 V, VBE = 0 VCE = 10 V, VBE = 0, TA = 85°C Verified by random sampling V(BR)CEO 6 ICES - 9 -V nA 1 30 2 50 Collecto...
