Infineon Technologies BGA855N6
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. The high linearity performance of BGA855N6 ensures best sensitivity for the operation in 4G & 5G NSA configurations. 10 Data Sheet 2 Revision 2.2 2024-06-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS Applications Features 1 Features • Insertion power gain: 17.8 dB • Low noise figure: 0.60 dB • Low current consumption: 4.8 mA • High linearity performance IIP3: 0 dBm • Operating frequencies: 1164 - 1300 MHz...APPLICATIONS
FEATURES
● Operating frequencies: 1164 - 1300 MHz● Insertion power gain: 17.8dB
● Low noise figure: 0.60 dB
● High linearity performance IIP3: 0 dBm
● Low current consumption: 4.8 mA
● Ultra small TSNP-6-10 leadless package (footprint: 0.7 x 1.1 mm2)
● RF output internally matched to 50 Ohm
● Only one external matching component needed
● Specifically designed for: - L2/L5 GPS Signals - E5a/E5b/E6 Galileo Signals - G2/G3 Glonass Signals - B2/B3 Beidou Signals 0.7 x 1.1 mm2 Application Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Block diagram VCC PON AI ESD Data Sheet GND AO BGA855N6_Blockdiagram.vsd Revision 2.2 2024-06-06 BGA855N6 Low Noise Amplifier for Lower L-Band GNSS
APPLICATIONS
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