Datasheet4U Logo Datasheet4U.com

BGA8U1BN6 - Low Noise Amplifier

Description

The BGA8U1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 4.0 GHz to 6.0 GHz.

The LNA provides 13.7 dB gain and 1.6 dB noise figure at a current consumption of 4.5 mA in the application configuration described in Chapter 4.

Features

  • Operating frequencies: 4.0 - 6.0 GHz.
  • Insertion power gain: 13.7 dB.
  • Insertion Loss in bypass mode: 7.5 dB.
  • Low noise figure: 1.6 dB.
  • Low current consumption: 4.5 mA.
  • Multi-state control: OFF-, bypass- and high gain-Mode.
  • Ultra small TSNP-6-2 leadless package.
  • RF input and RF output internally matched to 50 Ohm, no external components necessary 0.7 x 1.1 mm2.

📥 Download Datasheet

Datasheet preview – BGA8U1BN6

Datasheet Details

Part number BGA8U1BN6
Manufacturer Infineon
File Size 484.71 KB
Description Low Noise Amplifier
Datasheet download datasheet BGA8U1BN6 Datasheet
Additional preview pages of the BGA8U1BN6 datasheet.

📁 Similar Datasheet

  • BGA2001 - Silicon MMIC amplifier (NXP)
  • BGA2003 - Silicon MMIC amplifier (NXP)
  • BGA2012 - 1900 MHz high linear low noise amplifier (NXP)
  • BGA2022 - MMIC mixer (NXP)
  • BGA2031 - MMIC variable gain amplifier (NXP)
  • BGA2031-1 - MMIC variable gain amplifier (NXP)
  • BGA24 - 8-bit ECC NAND flash (XTX)
  • BGA2709 - MMIC wideband amplifier (NXP)
  • BGA2711 - MMIC wideband amplifier (NXP)
  • BGA2712 - MMIC wideband amplifier (NXP)
Other Datasheets by Infineon
  • BGA824N6 - Silicon Germanium Low Noise Amplifier
  • BGA825L6S - Silicon Germanium Low Noise Amplifier
  • BGA855N6 - Low Noise Amplifier
  • BGA10H1MN9 - High-band Low Noise Amplifier
  • BGA123L4 - Small Footprint Ultra Low Current Low Noise Amplifier
  • BGA123N6 - Ultra Low Current Low Noise Amplifier
  • BGA125N6 - Ultra Low Current Low Noise Amplifier
  • BGA231N7 - Silicon Germanium GNSS Low Noise Amplifier

Full PDF Text Transcription

Click to expand full text
BGA8U1BN6 BGA8U1BN6 Low Noise Amplifier for Ultra High Band 4-6GHz (f.e. LTE - U/ LAA with bypass) Features • Operating frequencies: 4.0 - 6.0 GHz • Insertion power gain: 13.7 dB • Insertion Loss in bypass mode: 7.5 dB • Low noise figure: 1.6 dB • Low current consumption: 4.5 mA • Multi-state control: OFF-, bypass- and high gain-Mode • Ultra small TSNP-6-2 leadless package • RF input and RF output internally matched to 50 Ohm, no external components necessary 0.7 x 1.1 mm2 Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end.
Published: |