Datasheet4U Logo Datasheet4U.com

BSC096N10LS5 - 100V MOSFET

Description

.

.

.

.

Features

  • Ideal for high-frequency switching.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Optimized for chargers Product validation Fully qualified according to JEDEC for Industrial.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSC0901NS N-Channel Power MOSFET Infineon Technologies
BSC0901NSI n-Channel Power MOSFET Infineon Technologies
BSC0902NS 30V MOSFET Infineon Technologies
BSC0904NSI 30V Power MOSFET Infineon Technologies
BSC0908NS N-Channel Power MOSFET Infineon Technologies

Other Datasheets by Infineon

Part Number Description
BSC0902NSI MOSFET
BSC0906NS 30V MOSFET
BSC0910NDI Dual N-Channel OptiMOS MOSFET
BSC0911ND Dual N-Channel OptiMOS MOSFET
BSC0921NDI Dual N-Channel OptiMOS MOSFET

Full PDF Text Transcription

Click to expand full text
BSC096N10LS5 MOSFET OptiMOSTM5Power-Transistor,100V Features •Idealforhigh-frequencyswitching •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforchargers Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.6 mΩ ID 72 A Qoss 30 nC QG(0V..4.5V) 12 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC096N10LS5 Package PG-TDSON-8 Marking 096N10LS RelatedLinks - Final Data Sheet 1 Rev.2.1,2019-09-02 OptiMOSTM5Power-Transistor,100V BSC096N10LS5 TableofContents Description .
Published: |