BSC100N10NSFG
BSC100N10NSFG is Power-Transistor manufactured by Infineon.
OptiMOS™2 Power-Transistor
Features
- Very low gate charge for high frequency applications
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
BSC100N10NSF G
Product Summary
V DS R DS(on),max ID
100 V 10 mΩ 90 A
PG-TDSON-8
Type BSC100N10NSF G
Package PG-TDSON-8
Marking 100N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C T C=100 °C
T A=25 °C,...
