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BSC110N15NS5
MOSFET
OptiMOSTM5Power-Transistor,150V
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max
11
mΩ
ID
76
A
QOSS
78
nC
QG (0V..10V)
28
nC
QSW
11.5
nC
PG-TDSON-8
8 7 6 5
5 6 7 8
Pin 1
2 3
4
4 3
2 1
Drain Pin 5-8
Gate
*1
Pin 4
Source *1: Internal body diode Pin 1-3
Type/OrderingCode BSC110N15NS5
Package PG-TDSON-8
Marking 110N15NS
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.